IRL2203S preliminary hexfet ? power mosfet pd 9.1091a s d g v dss = 30v r ds(on) = 0.007 w i d = 100a ? parameter typ. max. units r q jc junction-to-case CCC 1.2 r q ja junction-to-ambient ( pcb mounted,steady-state)** CCC 40 thermal resistance c/w l logic-level gate drive l surface mount l advanced process technology l dynamic dv/dt rating l 175c operating temperature l fast switching l fully avalanche rated fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d 2 pak is a surface mount power package capable of accommodating die sizes up to hex-4. it provides the highest power capability and the lowest possible on- resistance in any existing surface mount package. the d 2 pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0w in a typical surface mount application. description parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v ? 100 ? i d @ t c = 100c continuous drain current, v gs @ 10v ? 71 a i dm pulsed drain current ?? 400 p d @t a = 25c power dissipation 3.8 w p d @t c = 25c power dissipation 130 w linear derating factor 0.83 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ?? 390 mj i ar avalanche current ? 60 a e ar repetitive avalanche energy ? 13 mj dv/dt peak diode recovery dv/dt ?? 1.2 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings d 2 pak
IRL2203S parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 30 CCC CCC v v gs = 0v, i d = 250a d v (br)dss / d t j breakdown voltage temp. coefficient CCC 0.035 CCC v/c reference to 25c, i d = 1ma ? CCC CCC 0.007 v gs = 10v, i d = 60a ? CCC CCC 0.01 v gs = 4.5v, i d = 50a ? v gs(th) gate threshold voltage 1.0 CCC 2.5 v v ds = v gs , i d = 250a g fs forward transconductance 47 CCC CCC s v ds = 25v, i d = 60a ? CCC CCC 25 a v ds = 30v, v gs = 0v CCC CCC 250 v ds = 24v, v gs = 0v, t j = 150c gate-to-source forward leakage CCC CCC 100 na v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC CCC 110 i d = 60a q gs gate-to-source charge CCC CCC 31 nc v ds = 24v q gd gate-to-drain ("miller") charge CCC CCC 57 v gs = 4.5v, see fig. 6 and 13 ?? t d(on) turn-on delay time CCC 15 CCC v dd = 15v t r rise time CCC 210 CCC ns i d = 60a t d(off) turn-off delay time CCC 29 CCC r g = 1.8 w, v gs = 4.5v t f fall time CCC 54 CCC r d = 0.25 w, see fig. 10 ?? between lead, CCC CCC and center of die contact c iss input capacitance CCC 3500 CCC v gs = 0v c oss output capacitance CCC 1400 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 690 CCC ? = 1.0mhz, see fig. 5 ? electrical characteristics @ t j = 25c (unless otherwise specified) r ds(on) static drain-to-source on-resistance i gss i dss drain-to-source leakage current l s internal source inductance 7.5 nh ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) notes: ? v dd = 15v, starting t j = 25c, l = 220h r g = 25 w , i as = 60a. (see figure 12) ? pulse width 300s; duty cycle 2%. ? calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to design tip # 93-4 ? i sd 60a, di/dt 140a/s, v dd v (br)dss , t j 175c parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) CCC CCC showing the i sm pulsed source current integral reverse (body diode) ? CCC CCC p-n junction diode. v sd diode forward voltage CCC CCC 1.3 v t j = 25c, i s = 60a, v gs = 0v ? t rr reverse recovery time CCC 94 140 ns t j = 25c, i f = 60a q rr reverse recoverycharge CCC 280 410 nc di/dt = 100a/s ?? source-drain ratings and characteristics s d g 100 ? 400 a ? uses irl2203n data and test conditions. ** when mounted on fr-4 board using minimum recommended footprint. for recommended footprint and soldering techniques refer to application note #an-994.
IRL2203S fig 1. typical output characteristics, t j = 25 o c fig 2. typical output characteristics, t j = 175 o c fig 4. normalized on-resistance vs. temperature fig 3. typical transfer characteristics 1 10 100 1000 0.1 1 10 100 i , drain-to-so urce current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 2 5c j vgs t o p 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v 1 10 100 1000 0.1 1 10 100 i , drain-to-so urce current (a) d v , drain-to-source voltage (v) ds a 20s pulse width t = 175c vgs t o p 15v 12v 10v 8.0v 6.0v 4.0v 3.0v bottom 2.5v 2.5v j 1 10 100 1000 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 t = 25c j gs v , gate-to-source voltage (v) d i , drain-to-s ourc e c urre nt (a ) t = 175c j a v = 1 5 v 20s pulse w idth ds 0.0 0.5 1.0 1.5 2.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 j t , junction tem perature (c) r , drain-to-source o n resistance ds (on ) (norm alized) v = 10v gs a i = 100 a d
IRL2203S fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 2000 4000 6000 8000 1 10 100 c, capacitance (pf) ds v , drain-to-source voltage (v) a v = 0 v, f = 1m hz c = c + c , c sho rte d c = c c = c + c gs iss gs gd ds rss gd oss ds gd c is s c oss c rs s 0 3 6 9 12 15 0 30 60 90 120 150 q , total g ate charge (nc) g v , gate-to-source voltage (v) gs a for test circuit see figure 13 v = 24 v v = 15 v i = 60a d ds ds 10 100 1000 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t = 25c j v = 0 v gs v , source-to-drain voltage (v) i , r everse drain cu rren t (a) sd sd a t = 175c j 1 10 100 1000 1 10 100 v , drain-to-source voltage (v) ds i , drain current (a ) operation in this area limited by r d ds(on) 10s 100s 1ms 10ms a t = 25 c t = 17 5c single pulse c j
IRL2203S fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. 5.0v + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 0 20 40 60 80 100 25 50 75 100 125 150 175 c i , d ra in cu rren t (am p s) d t , case tem perature (c) a limited by package 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , rectangular pulse duration (sec) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in gle pu ls e (ther mal r esponse) a thermal response (z ) p t 2 1 t dm notes: 1. d uty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c
IRL2203S 5.0 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 w t p d.u.t l v ds + - v dd driver a 15v 20v 5.0 v fig 12c. maximum avalanche energy vs. drain current 0 200 400 600 800 1000 25 50 75 100 125 150 175 j e , single pulse a valanche e nergy (mj) as a starting t , junction temperature (c) v = 1 5v i to p 24 a 4 2a bottom 60a dd d q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + -
IRL2203S p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfets * v gs = 5v for logic level devices peak diode recovery dv/dt test circuit ? ? ? r g v dd dv/dt controlled by r g driver same type as d.u.t. i sd controlled by duty factor "d" d.u.t. - device under test d.u.t circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? *
IRL2203S package outline d 2 pak dimensions are shown in millimeters (inches) part number international rectifier log o example : this is an irf1010 w ith assembly l ot co de 9 b1m assembly lot code date code (yyw w ) yy = year ww = week 9246 irf 10 10 9b 1 m a part marking part number international r e ct if ie r l o g o date code (yyw w ) yy = year ww = week assembly l o t co de f530s 9 b 1m 9246 e xa m pl e : th is is a n irf 5 30 s w ith a ss em b ly l o t c o d e 9b 1 m a 10.16 (.400) re f . 6.47 (.255) 6.18 (.243) 2.61 (.103) 2.32 (.091) 8.89 (.350) r e f. - b - 1.32 (.052) 1.22 (.048) 2.79 (.110) 2.29 (.090) 1.39 (.055) 1.14 (.045) 5.28 (.208) 4.78 (.188) 4.69 (.185) 4.20 (.165) 10.54 (.415) 10.29 (.405) - a - 2 1 3 15.49 (.610) 14.73 (.580) 3x 0.93 (.037) 0.69 (.027) 5.08 (.200) 3x 1.40 (.055) 1.14 (.045) 1.78 (.070) 1.27 (.050) 1.40 (.055) m ax. notes: 1 dimensions after solder dip. 2 dimensioning & toleran cing per ansi y14.5m, 1982. 3 controlling dimension : inch. 4 heatsink & lead dimensions do not include burrs. 0.55 (.022) 0.46 (.018) 0.25 (.010) m b a m minimum recommended footprint 11.43 (.450) 8.89 (.350) 17.78 (.700) 3.81 (.150) 2.08 (.082) 2x lead assignmen ts 1 - ga te 2 - d r ain 3 - source 2.54 (.100) 2x
IRL2203S tape & reel d 2 pak dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) tr l feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) m in . 30.40 (1.197) m ax. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flang e distortio n @ o uter edge. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 3-30-4 nishi-ikeburo 3-chome, toshima-ki, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 7/96
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